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Method of Controlling Ion Energy and Flux in Capacitively Coupled Radio Frequency Discharges

The energy of ions impacting surfaces during plasma processing is crucial in determining both the properties of materials being deposited by plasmas and for the control of the etching of thin films. A new method that allows the ion energy and plasma density to be decoupled has been developed.


Ion energy and ion flux can be independently controlled. This simple but previously overlooked technique will be an enabling technology for future materials and plasma applications.

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