Compared to conventional semiconductor devices polymer semiconductor devices are particularly attractive for applications in which flexibility light weight large-area thin film low-cost and/or environmentally safe characteristics are important. However despite these potential advantages devices made from neutral conjugated polymers have found limited applications due to their low carrier mobility and charge injection barrier at the polymer/electrode interfaces. Polymer devices that could overcome these limitations and offer the advantages listed above would be of great benefit. The p-i-n junction diodes disclosed here do exactly that: they overcome the noted limitations while exhibiting many of the benefits associated with polymer devices. Applications: 1) Electroluminescence with high quantum or power efficiency 2) Solid state lighting 3) Photodetection at high sensitivity 4) Solar cells 5) Large area thin film transistors capable of carrying high current densities
1) Low-cost high-volume production is possible 2) Large-area devices can be fabricated easily 3) Thin flexible and/or conformable devices are possible 4) High solar energy conversion efficiency