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Hetero-epitaxial growth of non-lattice matched semiconductors

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A method for growing a compound semiconductor such as GaAs or InP on a non-lattice matched substrate such as Si utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask the method is also adapted to selective area epitaxy.


Provide a method for the liquid phase epitaxial growth of a compound semiconductor layer on a non-lattice matched substrate utilizing apparatus that is simple in design and easy to operate.

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