Stanford researchers have developed a depletion-mode MOSFET-based phototransistor with sub-wavelength dimensions extremely high responsivity and a low dark current. The device is highly scalable and explicitly CMOS compatible suggesting that a small output capacitance is achievable. Electron-hole pairs generated in this phototransistor are not immediately collected at the electrodes unlike those in a photodiode. Instead they remain in the channel and the substrate of a depletion-mode MOSFET thereby reducing the depletion region of the channel and modulating the MOSFET\'s current from source to drain. This device is a promising substitute for photodiodes in optical interconnects and optical detection applications. We are asking parties interested in commercializing this technology.
1) High responsivity requires less optical power from the light emitter 2) Scalable 3) Small output capacitance 4) Smaller device footprint 5) Easily integrated on a silicon chip