Cleaved Facet Edge-Emitting Laser Diodes Grown on Semipolar GaN

Technology

Researchers at the University of California Santa Barbara have developed cleaved facet edge-emitting laser diodes grown on semipolar gallium nitride substrates. Because the devices are grown on a semipolar orientation they have lower thresholds and higher efficiencies. The efficiency is further increased due to smooth low loss cavities achieved by cleaved mirror facets. These devices are applicable to high brightness lighting displays high resolution printers projection displays next generation DVD players medical imaging and efficient solid-state lighting. Applications: 1) High Brightness Lighting Displays 2) High Resolution Printers 3) Projection Displays 4) Next Generation DVD Players 5) Medical Imaging 6) Efficient Solid-State Lighting This technology is available for licensing.

Benefits

1) Lower thresholds and higher efficiencies than standard polar c-plane laser diodes 2) May offer higher wall-plug efficiencies than can be achieved with LEDs 3) Smooth low loss mirror facets with high reflectivity

Date of release