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Bandgap Engineered Photovoltaic Devices

This technology has created a novel design that incorporates unipolar barriers (barriers that block either electrons or holes separately) in a PN or PIN junction diode. It uses appropriately placed barriers for electrons and holes so that the majority of the sources of noise are suppressed while maintaining a large useful photocurrent signal.

Benefits:

1) An intrinsic region disposed between a P and N junction 2) An electron-blocking layer disposed between the intrinsic region and the P regionA hole-blocking layer disposed between the intrinsic region and the N region 3) Both blocking layers are unipolar

Date of release: